Abstract: Silicon Carbide (SiC) MOSFETs are promising replacements for Silicon (Si) IGBTs in various power electronic topologies. While extensive research exists on SiC MOSFET based 2-quadrant ...
Abstract: The main objective of proposed work apply the minimal number of MOSFETs and non-complementary inputs are used. The proposed work presents a comparative study of two types of 1-bit full adder ...
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