The new devices combine 30 A current capability, 1,500 VDC dielectric withstand voltage and operation up to +150°C.
The sensor combines 2µs output refresh, speeds above 50,000 rpm and three-axis magnetic sensing in a compact DFN-6 package.
Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...
Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.
GaN HEMTs with gate-termination extensions show improved single-event hardness, enabling higher operating voltages in LEO ...
Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Navitas’ Claros Acquisition, ...
The nPZ2100 manages sensors and peripherals autonomously, reducing MCU wake-ups and energy consumption in battery-powered ...
Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...
The 650V GaN FET family targets high-efficiency power conversion for AI data centers, computing, industrial and critical ...
Boost converter fundamentals, from inductor energy storage and diode conduction to duty cycle limits, explored through QSPICE simulation. After reviewing solutions for efficiently lowering electrical ...
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