TI's TMCS2100-Q1 uses multiaxial sensing to reject crosstalk in coreless Hall-effect current sensors for traction inverters.

The new series offers up to 83,000 µF, 300 V ratings and 10,000-hour endurance for demanding compact power applications.

The new devices combine 30 A current capability, 1,500 VDC dielectric withstand voltage and operation up to +150°C.

Here’s a RoundUp of this month’s must-read news about silicon carbide (SiC), gallium nitride (GaN), and Wide Bandgap ...

The sensor combines 2µs output refresh, speeds above 50,000 rpm and three-axis magnetic sensing in a compact DFN-6 package.

Rad-hard MOSFETs, GaN transistors and other HiRel devices provide reliable power for the telescope’s demanding space mission.

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on Navitas’ Claros Acquisition, ...

Navitas CEO Chris Allexandre and Claros CEO Dan Kultran discuss the planned acquisition, Claros's 40 A IVR chip, and the deal ...

The device combines up to 10 MBd data rates, 5,000 VRMS isolation and high CMTI for reliable signaling in electrically noisy environments. Würth Elektronik has expanded its optoelectronics portfolio ...

The nPZ2100 manages sensors and peripherals autonomously, reducing MCU wake-ups and energy consumption in battery-powered ...

GaN HEMTs with gate-termination extensions show improved single-event hardness, enabling higher operating voltages in LEO ...