A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...

The MDS150 provides 150 W of output power at 1030/1090 MHz with Mode-S pulsing (0.5 µs on/off x128 burst). This Class C biased, bipolar transistor runs on V(cc) of 50 V making it easy to use with ...

The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...

While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...

MALVERN, PA — Vishay Intertechnology Inc. (NYSE: VSH) introduced a new automotive-grade photovoltaic MOSFET driver designed ...

* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...

Intel has come out swinging in a big way celebrating the 75th anniversary of the transistor, where at IEDM 2022 (the International Electron Devices Meeting) that the company is aiming for 10x density ...