The device processing for the double-clamped GaN bridge resonator on Si substrate: (1) The as-grown GaN epitaxial film on Si substrate. Except for the AlN buffer layer, no strain removal layer is used ...
Most discussions of advanced lithography focus on three elements — the exposure system, photomasks, and photoresists — but that’s only part of the challenge. Successfully transferring a pattern from ...
Photoresist metrics such as resolution, roughness, CD uniformity, and overall process window are often aimed to realize the full potential of EUV lithography. From the view of the materials supplier, ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback