Standardized power-semiconductor chip will extend driving range and lower power costs for xEVs Mitsubishi Electric’s new power semiconductor chip is a proprietary trench SiC-MOSFET that reduces power ...

NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced its participation as an industry partner in a three-year, $2.5 million project led ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

With a drain-source breakdown voltage of 1700 V, the SCT2H12NZ N-channel SiC (silicon carbide) MOSFET from ROHM is optimized for industrial applications, including high-voltage general-purpose ...

Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will showcase its latest GaN and SiC products for AI data ...

Electrical power designs are driven by market needs for increased efficiency and improved productivity while conforming to regulatory requirements. The overriding end user need is almost always for ...

STMicroelectronics has revealed an advanced new product family enabling power supply designers to drive up energy efficiency in applications such as solar inverters and electric vehicles, enterprise ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor ...