Scientists at Germany’s Fraunhofer Institute for Solar Energy Systems (ISE) have investigated gallium-doping in p-type silicon wafers as a route to better performance. Testing these specially produced ...

French scientists have studied the fabrication of silicon heterojunction cells with p-type wafers. With the adoption of gallium doping, the p-type products could come close to matching the performance ...

This high performance is enabled by p-type doping through nitric oxide (NO) treatment at 100 °C for 30 minutes. Furthermore, we scaled the channel length down to 50 nm, integrated a high-κ gate ...

The carrier concentration and conductivity in p-type monovalent copper semiconductors can be significantly enhanced by adding alkali metal impurities. Doping with isovalent and larger-sized alkali ...

Single-walled carbon nanotubes (SWCNTs) possess advantages of high thermal stability, high flexibility, lightweight, easy controllable doping level. Their thermoelectric properties are almost ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...